Defect structure of a free standing GaN wafer grown by the ammonothermal method

被引：11
|
作者：
Sintonen, Sakari [1 ]
Suihkonen, Sami [1 ]
Jussila, Henri [1 ]
Lipsanen, Harri [1 ]
Tuomi, Turkka O. [1 ]
Letts, Edward [2 ]
Hoff, Sierra [2 ]
Hashimoto, Tadao [2 ]
机构：
[1] Aalto Univ, Sch Elect Engn, Dept Micro & Nanosci, Espoo 02150, Finland
[2] SixPoint Mat Inc, Buellton, CA 93427 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 406卷
基金：
芬兰科学院;
关键词：
X-ray diffraction; X-ray topography; Defects; Single crystal growth; Growth from solutions; Nitrides; X-RAY-DIFFRACTION; SYNCHROTRON-RADIATION; DISLOCATION CONTRAST; BULK GAN; TOPOGRAPHY;
D O I：
10.1016/j.jcrysgro.2014.08.022
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8 x 10(4) cm(-2) and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed. (C) 2014 Elsevier By. All rights reserved.
引用
收藏
页码：72 / 77
页数：6
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