Defect structure of a free standing GaN wafer grown by the ammonothermal method

被引：11

作者：

Sintonen, Sakari ^{[1
]}

Suihkonen, Sami ^{[1
]}

Jussila, Henri ^{[1
]}

Lipsanen, Harri ^{[1
]}

Tuomi, Turkka O. ^{[1
]}

Letts, Edward ^{[2
]}

Hoff, Sierra ^{[2
]}

Hashimoto, Tadao ^{[2
]}

机构：

[1] Aalto Univ, Sch Elect Engn, Dept Micro & Nanosci, Espoo 02150, Finland

[2] SixPoint Mat Inc, Buellton, CA 93427 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 406卷

基金：

芬兰科学院;

关键词：

X-ray diffraction; X-ray topography; Defects; Single crystal growth; Growth from solutions; Nitrides; X-RAY-DIFFRACTION; SYNCHROTRON-RADIATION; DISLOCATION CONTRAST; BULK GAN; TOPOGRAPHY;

D O I：

10.1016/j.jcrysgro.2014.08.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8 x 10(4) cm(-2) and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed. (C) 2014 Elsevier By. All rights reserved.

引用

页码：72 / 77

页数：6

共 50 条

[1] Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia
Hashimoto, T
Fujito, K
Wu, F
Haskell, BA
Fini, PT
Speck, JS
Nakamura, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (24-27): : L797 - L799
[2] Development of GaN wafers via the ammonothermal method
Letts, Edward
Hashimoto, Tadao
Hoff, Sierra
Key, Daryl
Male, Keith
Michaels, Mathew
JOURNAL OF CRYSTAL GROWTH, 2014, 403 : 3 - 6
[3] Nonpolar GaN substrates grown by ammonothermal method
Kucharski, R.
Rudzinski, M.
Zajac, M.
Doradzinski, R.
Garczynski, J.
Sierzputowski, L.
Kudrawiec, R.
Serafinczuk, J.
Strupinski, W.
Dwilinski, R.
APPLIED PHYSICS LETTERS, 2009, 95 (13)
[4] Seeded growth of GaN by the basic ammonothermal method
Hashimoto, Tadao
Saito, Makoto
Fujito, Kenji
Wu, Feng
Speck, James S.
Nakamura, Shuji
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) : 311 - 316
[5] Optical and structural properties of m-plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates
Kudrawiec, R.
Rudzinski, M.
Kucharski, R.
Zajac, M.
Doradzinski, R.
Sierzputowski, L. P.
Garczynski, J.
Serafinczuk, J.
Strupinski, W.
Misiewicz, J.
Dwilinski, R.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2359 - 2364
[6] Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
Soh, C. B.
Chua, S. J.
Chen, P.
Chi, D. Z.
Liu, W.
Hartono, H.
THIN SOLID FILMS, 2007, 515 (10) : 4509 - 4513
[7] Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method
Hashimoto, Tadao
Key, Daryl
Letts, Edward
Gaddy, Mathew
Gregory, Austin
Dickens, James
West, Tim
Zhao, Wei
Guo, Mengzhe
Buyuklimanli, Temel
JOURNAL OF CRYSTAL GROWTH, 2023, 621
[8] Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN
Sintonen, Sakari
Ali, Muhammad
Suihkonen, Sami
Kostamo, Pasi
Svensk, Olli
Sopanen, Markku
Lipsanen, Harri
Paulmann, Carsten
Tuomi, Turkka O.
Zajac, Marcin
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1630 - 1632
[9] Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
Raghothamachar, B
Vetter, WM
Dudley, M
Dalmau, R
Schlesser, R
Sitar, Z
Michaels, E
Kolis, JW
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) : 271 - 280
[10] Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
Martinez-Criado, G
Kuball, M
Benyoucef, M
Sarua, A
Frayssinet, E
Beaumont, B
Gibart, P
Miskys, CR
Stutzmann, M
JOURNAL OF CRYSTAL GROWTH, 2003, 255 (3-4) : 277 - 281

← 1 2 3 4 5 →