Effect of the doping concentration of Er3+ on ferroelectric properties of Bi4-xErxTi3O12 films

被引：2

作者：

Shi, Min ^{[1
]}

Men, Enyang ^{[1
]}

Chen, Hao ^{[1
]}

Xu, Yudong ^{[1
]}

Zuo, Ruzhong ^{[2
]}

Bai, Tiancheng ^{[1
]}

Du, Shushu ^{[1
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230069, Peoples R China

[2] Anhui Polytech Univ, Sch Mat Sci & Engn, Wuhu 241005, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2022年 / 33卷 / 16期

基金：

中国国家自然科学基金;

关键词：

DIELECTRIC-PROPERTIES; THIN-FILMS; MICROSTRUCTURE; POLARIZATION; LA;

D O I：

10.1007/s10854-022-08251-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Bi4-xErxTi3O12 films were deposited on the substrates via the spin-coating method. The doping of Er3+ does not give rise to the variation of phase composition and element valence state in the Bi4-xErxTi3O12 films. The Bi4-xErxTi3O12 films show dense surfaces and clear phase interfaces between the films and the substrates. And the surfaces of the Bi4-xErxTi3O12 films contain particles with various sizes and irregular shapes. The leakage current density and ferroelectricity of Er3+-doped Bi4Ti3O12 (Bi4-xErxTi3O12) are lower than those of Bi4Ti3O12 films. With increasing the doping concentration of Er3+, the values of leakage current density of Bi4-xErxTi3O12 films decrease at first and then increase. Meanwhile, the values of remanent polarization of Bi4-xErxTi3O12 films increase at the beginning and then decrease. Among the five films, the Bi3.4Er0.6Ti3O12 film exhibit smallest value of leakage current density (6.43 x 10(-7) A center dot cm(-2)) and greatest value of remanent polarization (14.4 mu C center dot cm(-2)), which indicates the better ferroelectric properties. This is beneficial for the application of ferroelectric functional devices.

引用

页码：13124 / 13132

页数：9

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