Resonant tunneling circuit technology: Has it arrived?

被引：21

作者：

Seabaugh, A

Brar, B

Broekaert, T

Frazier, G

Morris, F

vanderWagt, P

Beam, E

机构：

来源：

GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997 | 1997年

关键词：

D O I：

10.1109/GAAS.1997.628251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.

引用

页码：119 / 122

页数：4