Laser-induced quantum coherence in a semiconductor quantum well

被引：352

作者：

Serapiglia, GB ^{[1
]}

Paspalakis, E

Sirtori, C

Vodopyanov, KL

Phillips, CC

机构：

[1] Imperial Coll, Dept Phys, Expt Solid State Grp, London SW7 2BZ, England

[2] Imperial Coll, Dept Phys, Opt Sect, London SW7 2BZ, England

[3] Thomson CSF, LCR, F-91404 Orsay, France

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.84.1019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms of all three states being simultaneously driven into "phase-locked" quantum coherence by a single coupling field. We describe the effect theoretically with a density matrix method and an adapted linear response theory.

引用

页码：1019 / 1022

页数：4

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