Effect of Ga-doping on magnetic and electrical properties of La2/3Sr1/3Mn1-xGaxO3 (0x≤0.5)

被引：2

作者：

Blasco, J ^{[1
]}

García, J ^{[1
]}

Stankiewicz, J ^{[1
]}

机构：

[1] Univ Zaragoza, Fac Ciencias, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷

关键词：

magnetoresistance; metal-insulator; perovskites; manganites; disorder effects;

D O I：

10.1016/j.jmmm.2003.12.751

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the effect of substitution of Mn by Ga in the La1-xSrxMn1-xGaxO3 system. We find that the Curie temperature strongly decreases as the content of Ga increases. The x<0.3 samples order ferromagnetically while the x > 0.3 samples show a spin-glass like behavior. Electrical properties also vary significantly with x. For x > 0.3, the system is semiconducting while for xless than or equal to0.2 it exhibits a metal-insulator transition. The metallic behavior onset occurs close to the Curie temperature for x<0.05 whereas the resistivity maximum appears well below the magnetic ordering temperature for 0.05less than or equal toxless than or equal to0.2. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1810 / 1811

页数：2

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