Cadmium atomic layers on tellurium electrodes

被引:2
作者
Rabchinskii, S. M. [1 ]
Bagaev, S. I. [1 ]
Strel'tsov, E. A. [1 ]
机构
[1] Belarusian State Univ, Minsk 220050, BELARUS
关键词
cadmium; UPD; CdTe; electrodeposition; nanodimensional semiconductor;
D O I
10.1134/S1023193506080039
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The process of electrodeposition of atomic layers of cadmium Cd-ad at order of magnitude polycrystalline tellurium electrodes at potentials in excess of equilibrium potential ECd2+/Cd (underpotential deposition, UPD) is studied. In acid sulfate solutions (0.1 M H2SO4 + 0.05 M CdSO4), the magnitude of underpotential (underpotential shift) Delta E-UPD = 0.41 V. In cyclic voltammograms, the anodic oxidation of Cd-ad is recorded in the form of two peaks of anodic current that are displaced relative to one another in the potential scale (weakly and strongly bound adatoms). The cadmium UPD process on tellurium is accompanied by the diffusion of cadmium into the bulk of tellurium and a transition from a 2D structure Cd-ad/Te to 3D CdTe nanostructures, which are distributed in the tellurium matrix. In contrast with tellurium, the Te/CdTenano heterostructure exhibits photoelectrochemical activity, i.e. it generates a cathodic photocurrent.
引用
收藏
页码:823 / 829
页数:7
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