Electronic States at the Graphene-Hexagonal Boron Nitride Zigzag Interface

被引:79
作者
Drost, Robert [1 ]
Uppstu, Andreas [2 ,3 ]
Schulz, Fabian [1 ]
Hamalainen, Sampsa K. [1 ]
Ervasti, Mikko [2 ,3 ]
Harju, Ari [2 ,3 ]
Liljeroth, Peter [1 ]
机构
[1] Aalto Univ, Sch Sci, Dept Appl Phys, POB 15100, Aalto 00076, Finland
[2] Aalto Univ, Sch Sci, COMP Ctr Excellence, Aalto 00076, Finland
[3] Aalto Univ, Sch Sci, Dept Appl Phys, Helsinki Inst Phys, Aalto 00076, Finland
基金
欧洲研究理事会; 芬兰科学院;
关键词
Graphene; hexagonal boron nitride; interface; zigzag; scanning tunneling microscopy (STM); EDGE STATES; HETEROSTRUCTURES; NANORIBBONS;
D O I
10.1021/nl501895h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic properties of graphene edges have been predicted to depend on their crystallographic orientation. The so-called zigzag (ZZ) edges haven been extensively explored theoretically and proposed for various electronic applications. However, their experimental study remains challenging due to the difficulty in realizing clean ZZ edges without disorder, reconstructions, or the presence of chemical functional groups. Here, we propose the ZZ-terminated, atomically sharp interfaces between graphene and hexagonal boron nitride (BN) as experimentally realizable, chemically stable model systems for graphene ZZ edges. Combining scanning tunneling microscopy and numerical methods, we explore the structure of grapheneBN interfaces and show them to host localized electronic states similar to those on the pristine graphene ZZ edge.
引用
收藏
页码:5128 / 5132
页数:5
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