Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells

被引：34

作者：

Symanczyk, Ralf ^{[1
]}

Bruchhaus, Rainer ^{[1
]}

Dittrich, Rok ^{[2
]}

Kund, Michael ^{[1
]}

机构：

[1] Qimonda AG, D-81707 Munich, Germany

[2] Qimonda Dresden GmbH & Co OHG, D-01099 Dresden, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 08期

关键词：

CBRAM; chalcogenide; nonvolatile memory; reliability; retention;

D O I：

10.1109/LED.2009.2024623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25 degrees C to 85 degrees C. Based on the calculated activation energy, ten years of data retention is extrapolated.

引用

页码：876 / 878

页数：3

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