S-K Growth of InAs quantum dots on directly-bonded InP/Si substrate using MOVPE

被引：0
|
作者：
Kamada, Naoki [1 ]
Sukigara, Toshiki [1 ]
Matsumoto, Keiichi [1 ]
Kishikawa, Junya [1 ]
Nishiyama, Tetsuo [1 ]
Onuki, Yuya [1 ]
Shimomura, Kazuhiko [1 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, 7-1 Kioi, Tokyo 1028554, Japan
来源：
2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) | 2016年
关键词：
quantum dots; LD; InAs; InP/Si;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stranski-Krastonogh QDs have been successfully grown on InP/Si substrate fabricated by wafer direct bonding. According to PL and AFM measurements, almost the same size and peak wavelength have been obtained with the InP substrate.
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页数：3
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