Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film

被引：0
作者：
Cretu, B. [1 ,2 ,3 ]
Simoen, E. [4 ]
Routoure, J. -M. [4 ]
Carin, R. [4 ]
Aoulaiche, M. [4 ]
Claeys, C. [4 ,5 ]
机构：
[1] ENSICAEN, UMR GREYC 6072, F-14050 Caen, France
[2] Univ Caen Basse Normandie, UMR GREYC 6072, F-14050 Caen, France
[3] CNRS, UMR GREYC 6072, F-14032 Caen, France
[4] IMEC, B-3001 Louvain, Belgium
[5] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
来源：
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2013年
关键词：
UTBOX; thin silicon film; low frequency noise; carrier number fluctuation noise; Lorentzian noise; RETENTION TIME; 1/F NOISE; TRANSISTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency noise versus the temperature allows to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps.
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页数：4
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