Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions

被引：109

作者：

Alzate, Juan G. ^{[1
]}

Amiri, Pedram Khalili ^{[1
,2
]}

Yu, Guoqiang ^{[1
]}

Upadhyaya, Pramey ^{[1
]}

Katine, Jordan A. ^{[3
]}

Langer, Juergen ^{[4
]}

Ocker, Berthold ^{[4
]}

Krivorotov, Ilya N. ^{[5
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Inston Inc, Los Angeles, CA 90024 USA

[3] HGST Inc, San Jose, CA 95135 USA

[4] Singulus Technol, D-63796 Kahl, Germany

[5] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 96297 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

关键词：

ATOMIC LAYERS;

D O I：

10.1063/1.4869152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we experimentally study the temperature dependence of the perpendicular magnetic anisotropy (PMA) and of the voltage-controlled magnetic anisotropy (VCMA) in nanoscale MgO|CoFeB|Ta-based magnetic tunnel junctions. We demonstrate that the temperature dependences of both the PMA and the VCMA coefficient follow power laws of the saturation magnetization, but with different exponents. We also find that the linear dependence of the PMA on electric field is maintained over a wide temperature range, although the VCMA strength decreases faster as a function of temperature as compared to the PMA. Possible mechanisms leading to the different exponents are discussed. (C) 2014 AIP Publishing LLC.

引用

页数：5

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