Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula

被引：5

作者：

Latypov, Azat ^{[1
]}

Khaira, Gurdaman ^{[2
]}

Fenger, Germain ^{[2
]}

Sturtevant, John ^{[2
]}

Wei, Chih-, I ^{[3
]}

De Bisschop, Peter ^{[4
]}

机构：

[1] Mentor Graph Corp, Fremont, CA 94358 USA

[2] Mentor Graph Corp, Wilsonville, OR USA

[3] Mentor Graph Corp, Leuven, Belgium

[4] IMEC, Leuven, Belgium

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY XI | 2020年 / 11323卷

基金：

欧盟地平线“2020”;

关键词：

EUV; lithography; resist; stochastic; Gaussian random field; excursion; Rice's formula;

D O I：

10.1117/12.2551965

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The methods to calculate the probability of success/failure of EUV lithography (EUVL) processes are presented. The success of an EUVL process is defined as a complete removal of the resist material within one set of designated volumes and a complete retention of the resist material within another set of designated volumes in the resist film. We demonstrate that, under certain assumptions, the probability calculation reduces to the well-known problem of calculation of probability of excursion of a certain Gaussian random field. The methods to calculate the probability of success/failure of a lithographic process are presented, including the Monte-Carlo methods, methods based on factorization of a covariance matrix, methods based on Mahalanobis distance, and the methods using Rice's formula and its variations. A particular attention is paid to the methods applicable to full chip OPC and OPC verification. The results from the proposed methods are tested in simulations and by comparison with experimental data.

引用

页数：25