Resistive Switching Mechanism of HfO2 Based Resistance Random Access Memory Devices with Different Electrode Materials

This study investigated the impact of electrode materials on HfO2-based RRAM devices. The research includes three types of electrode materials: (1) the electrodes with strong ability of oxygen reservoirs; (2) the electrode with poor ability of oxygen reservoirs; (3) the active electrode with injection ability. Through implementing different combinations of electrodes, three types of switching modes were obtained and the relative conduction mechanism was analyzed, as well as conduction model. Those studies may offer ways of using electrodes to control the resistive switching processes and fabricating the RRAM devices with good performance.