Sub-Nanoampere One-Shot Single Electron Transistor Readout Electrometry Below 10 Kelvin

被引：14

作者：

Das, Kushal ^{[1
]}

Lehmann, Torsten ^{[1
]}

Dzurak, Andrew S. ^{[2
,3
]}

机构：

[1] Univ New S Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia

[2] Univ New S Wales, Sch Elect Engn & Telecommun, ARC Ctr Excellence Quantum Computat & Commun Tech, Sydney, NSW 2052, Australia

[3] Univ New S Wales, Australian Natl Fabricat Facil, Sydney, NSW 2052, Australia

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2014年 / 61卷 / 10期

基金：

澳大利亚研究理事会;

关键词：

Analog circuits; cryogenic CMOS; current detector; low temperature circuit; SET; silicon-on-insulator; single Electron Transistor; single-shot readout; temperature; 4; K; CMOS; SPIN;

D O I：

10.1109/TCSI.2014.2321196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Single Electron Transistor holds the potential to be a suitable readout device for future solid-state quantum computers. The low temperature measurement results of a 0.5 mu m Silicon-On-Sapphire CMOS circuit designed to interface with a Single Electron Transistor are presented. Careful design of the experimental set-up is critical for conducting the circuit test and performance measurements at cryogenic temperatures. The circuit operates at 4 K and achieves single-shot readout with a resolution in the order of one nanoampere. A detection delay as low as 1.5 mu s is recorded while dissipating only 20-30 mu W power.

引用

页码：2816 / 2824

页数：9

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