High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration

被引：6

作者：

Li, Hongqiang ^{[1
]}

Liu, Yu ^{[1
]}

Miao, Chunjiao ^{[2
]}

Zhang, Meiling ^{[1
]}

Zhou, Wenqian ^{[1
]}

Tang, Chunxiao ^{[1
]}

Li, Enbang ^{[1
,3
]}

机构：

[1] Tianjin Polytech Univ, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China

[2] Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing 100044, Peoples R China

[3] Univ Wollongong, Sch Phys, Fac Engn & Informat Sci, Wollongong, NSW 2522, Australia

来源：

OPTICAL ENGINEERING | 2014年 / 53卷 / 09期

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

silicon-on-insulator; binary blazed grating coupler; silicon-based hybrid photodetector integration; DESIGN;

D O I：

10.1117/1.OE.53.9.097106

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An efficient and high-performance binary blazed grating coupler was designed based on silicon-on-insulator (SOI) used for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. A relatively high coupling efficiency was obtained to optimize mode matching by the finite-difference time-domain method by choosing appropriate grating parameters, including period, etching depth, and fill factor. Coupling efficiency output at 1550 nm for the TE mode reached 68%. This value was >60% in the wavelength range of 1450 to 1600 nm, specifically 71.4% around 1478 nm. An InP/InGaAs photodetector and SOI wafer were integrated by using benzocyclobutene (BCB) bonding. When the thickness of the BCB bonding layer was 440 nm, power absorption efficiency at 1550 nm for the TE mode reached 78.5%, whereas efficiency reached similar to 81.8% around 1475 nm. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：6

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