Ultrahigh energy-storage performance in lead-free BZT thin-films by tuning relaxor behavior

被引：42
作者：
Nguyen, Minh D. [1 ,2 ]
机构：
[1] Ton Duc Thang Univ, Inst Computat Sci, Div Computat Mechatron, Ho Chi Minh City, Vietnam
[2] Ton Duc Thang Univ, Fac Elect & Elect Engn, Ho Chi Minh City, Vietnam
来源：
MATERIALS RESEARCH BULLETIN | 2021年 / 133卷 / 133期
关键词：
Lead-free film; Relaxor behavior; Transition temperature; Energy storage; Breakdown strength; ELECTRICAL-PROPERTIES; GRAIN-BOUNDARY; DIELECTRIC PERMITTIVITY; BREAKDOWN STRENGTH; CERAMICS; DENSITY; MICROSTRUCTURE; ENHANCEMENT; ORIENTATION; CAPACITORS;
D O I：
10.1016/j.materresbull.2020.111072
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Relaxor ferroelectric thin films show excellent energy-storage performance for pulse-power applications. In this study, La-doped Ba1-xLax(Zr0.25Ti0.75)O-3 (BLZT, x = 0-8%) thin films were grown on LaNiO3 buffered Ca2Nb3O10-nanosheet/Si substrates. BLZT thin films indicate prominently increasing relaxor behavior with increasing La-doping concentration, which is conducive to obtaining a very slim polarization hysteresis loop with a low remanent polarization and a high breakdown strength. As a result, BLZT thin films with 5 mol.% La-doping simultaneously exhibit a great 72.2 J/cm(3) recoverable energy-storage density and a large 78.6% energy-storage efficiency under a high 3.8 MV/cm breakdown strength. These results present a promising environmentally friendly candidate for the next generation of advanced energy-storage capacitor applications.
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页数：8
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