Three-stage evaporation of Cu(In,Ga)S2 solar cell absorber films without KCN treatment and Na control

被引:17
作者
Kaigawa, R [1 ]
Wada, T
Bakehe, S
Klenk, R
机构
[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan
[2] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan
[3] Hahn Meitner Inst Berlin GmbH, Abt SE2, D-14109 Berlin, Germany
关键词
Cu(In; Ga)S-2; Cu-poor; three-stage evaporation; depth profile; solar cell;
D O I
10.1016/j.tsf.2005.11.073
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu-poor Cu(In,Ga)S-2 films have been prepared by three-stage sequential evaporation ((In,Ga)-S/Cu-S/(In,Ga)-S) on Mo covered soda-lime glass without Na control. The depth profiles of O and Na in the gown films were investigated by secondary ion mass spectroscopy (SIMS). It has been found that the O-concentration was constant in the bulk, and decreased close to the surface comparable to the case of the two-stage process. The observed depth profile of Na resembles that of O. The efficiencies of solar cells from the O-2-annealed Cu-rich Cu(In,Ga)S-2 films did not increase, but the efficiencies of some solar cells prepared from Cu-poor Cu(In,Ga)S-2 films increased when the absorber was annealed in oxygen. The best efficiency of a solar cell from our O-2-annealed Cu-poor Cu(In,Ga)S-2 films was 9.3% (no antireflection coating) without KCN treatment and Na control. (c) 2006 Published by Elsevier B.V.
引用
收藏
页码:430 / 433
页数:4
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