Lowering the reset current and power consumption of Phase-Change Memories with carbon-doped Ge2Sb2Te5

被引：0

作者：

Hubert, Q. ^{[1
,2
]}

Jahan, C. ^{[1
]}

Toffoli, A. ^{[1
]}

Navarro, G. ^{[1
]}

Chandrashekar, S. ^{[1
]}

Noe, P. ^{[1
]}

Blachier, D. ^{[1
]}

Sousa, V. ^{[1
]}

Perniola, L. ^{[1
]}

Nodin, J-F. ^{[1
]}

Persico, A. ^{[1
]}

Kies, R. ^{[1
]}

Maitrejean, S. ^{[1
]}

Roule, A. ^{[1
]}

Henaff, E. ^{[1
]}

Tessaire, M. ^{[1
]}

Zuliani, P. ^{[3
]}

Annunziata, R. ^{[3
]}

Pananakakis, G. ^{[2
]}

Reimbold, G. ^{[1
]}

De Salvo, B. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus,17 Rue martyrs, F-38054 Grenoble 9, France

[2] IMEP LAHC, F-38016 Grenoble 1, France

[3] Technol R & D, STMicroelect, I-20041 Agrate Brianza, Italy

来源：

2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, a detailed investigation of the electrical performances of Phase-Change Memory test devices integrating carbon-doped Ge2Sb2Te5 (named GST-C) is reported. PCM devices with 5% of carbon atomic content yields more than 50% of current reduction compared to reference GST devices, with a programming window widely superior to two orders of magnitude and a cycling endurance up to 10(8) cycles. The reset current reduction is finally validated on shrinked wall-like test devices, proving that carbon-doped GST is a high promising material for future PCM technology.

引用

页数：4

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