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Modeling dielectric response and losses of ferroelectrics at microwave frequencies
被引:0
作者:
Zubko, SP
[1
]
机构:
[1] Electrotech Univ, Dept Elect, St Petersburg 197376, Russia
关键词:
incipient ferroelectrics;
room temperature ferroelectrics;
size effect;
microwave losses;
commutation quality factor;
D O I:
10.1080/10584580212368
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Displacement type ferroelectric BaxSr1-xTiO3 is characterized by the second order phase transition. In a perfect ferroelectric crystal the phase transition takes place at temperature T-C, which is called the Curie temperature. In the case of the real crystal, the temperature of the phase transition T is displaced to lower temperature and the temperature of the maximum of epsilon(T) T-m is displaced to higher value with respect to T-C. Thus, for the real ferroelectric sample (not for an incipient ferroelectric), one has T-C' < T-C < T-m. In the case of a thin film sample, the phase transition and the dielectric response of a ferroelectric sample are affected by the size of the sample, what is treated as a size effect. Experimental data obtained as a result of measurement of the dielectric constant as a function of temperature can be used for finding the parameters of the material.
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页码:71 / 80
页数:10
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