Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

被引:2
|
作者
Zhao, M. [1 ]
Karim, A.
Ni, W. -X.
Pidgeon, C. R.
Phillips, P. J.
Carder, D.
Murdin, B. N.
Fromherz, T.
Paul, D. J.
机构
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[2] Natl Nano Device Labs, Hsinchu 300, Taiwan
[3] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[4] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
[5] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[6] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
molecular beam epitaxy (MBE); Si/SiGe; pump-probe spectroscopy; intersubband transition; lifetime;
D O I
10.1016/j.jlumin.2006.08.080
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of similar to 2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process. (c) 2006 Elsevier B.V. All rights reserved.
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页码:403 / 408
页数:6
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