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Gab1 and SHP-2 promote Ras/MAPK regulation of epidermal growth and differentiation
被引:75
作者:
Cai, T
Nishida, K
Hirano, T
Khavari, PA
机构:
[1] Stanford Univ, Sch Med, Program Epithelial Biol, Stanford, CA 94305 USA
[2] Vet Affairs Palo Alto Healthcare Syst, Stanford, CA 94305 USA
[3] Osaka Univ, Grad Sch Frontier Biosci, Lab Dev Immunol, Osaka, Japan
[4] Osaka Univ, Grad Sch Med, Dept Mol Oncol, Osaka, Japan
关键词:
Gab1;
SHP-2;
Ras;
epidermis;
skin;
D O I:
10.1083/jcb.200205017
中图分类号:
Q2 [细胞生物学];
学科分类号:
071009 ;
090102 ;
摘要:
In epidermis, Ras can influence proliferation and differentiation; however, regulators of epidermal Ras function are not fully characterized, and Ras effects on growth and differentiation are controversial. EGF induced Ras activation in epidermal cells along with phosphorylation of the multisubstrate docking protein Gab1 and its binding to SHP-2. Expression of mutant Gab1(Y627F) deficient in SHP-2 binding or dominant-negative SHP-2(C459S) reduced basal levels of active Ras and downstream MAPK proteins and initiated differentiation. Differentiation triggered by both Gab1(Y627F) and SHP-2(C459S) could be blocked by coexpression of active Ras, consistent with Gab1 and SHP-2 action upstream of Ras in this process. To study the role of Gabl and SHP-2 in tissue, we generated human epidermis overexpressing active Gabl and SHP-2. Both proteins stimulated proliferation. In contrast, Gab(Y627F) and SHP-2(C459S) inhibited epidermal proliferation and enhanced differentiation. Consistent with a role for Gabl and SHP-2 in sustaining epidermal Ras/MAPK activity, Gabl (-/-) murine epidermis displayed lower levels of active Ras and MAPK with postnatal Gabl -/- epidermis, demonstrating the hypoplasia and enhanced differentiation seen previously with transgenic epidermal Ras blockade. These data provide support for a Ras role in promoting epidermal proliferation and opposing differentiation and indicate that Gabl and SHP-2 promote the undifferentiated epidermal cell state by facilitating Ras/MAPK signaling.
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页码:103 / 112
页数:10
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