Characteristics of poly(vinyl acetate) as a gate insulating material in organic thin film transistors

被引：19

作者：

Sung, J. H.

Park, S. J.

Park, J. H.

Choi, H. J. ^{[1
]}

Choi, J. S.

机构：

[1] Inha Univ, Dept Polymer Sci & Engn, Inchon 402751, South Korea

[2] Hongik Univ, Dept Elect Informat & Control Engn, Seoul 121791, South Korea

来源：

SYNTHETIC METALS | 2006年 / 156卷 / 11-13期

关键词：

organic thin film transistor; poly(vinyl acetate); dielectric constant; OTFF;

D O I：

10.1016/j.synthmet.2006.05.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the physical characteristics of poly(vinyl acetate) (PVAc) as a polymeric gate insulator in the organic thin film transistors (OTFTs), in which the OTFTs require not only a simple packing process with a relatively low cost compared to conventional inorganic electronics but also their compatibility with flexible substrates. The PVAc gives dielectric constant values in the range of 3.2-8.3, which can be adopted as a good gate insulator for OTFTs. The fabricating condition of OTFTs using the PVAc was improved by both adjusting its viscosity with that of a medium, and controlling the surface morphology and spin coating conditions. All these meet the requirement for a new organic gate-insulator, which can improve the performance of the present OTFTs. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：861 / 864

页数：4

共 23 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].