A 30V class extremely low on-resistance meshed trench lateral power MOSFET

被引：0
|
作者：
Sugi, A [1 ]
Tabuchi, K [1 ]
Sawada, M [1 ]
Kajiwara, S [1 ]
Matsubara, K [1 ]
Fujishima, N [1 ]
Salama, CAT [1 ]
机构：
[1] Fuji Elect Corp, Devices Technol Lab, R&D, Matsumoto, Nagano, Japan
来源：
PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A meshed trench lateral power MOSFET with a trench bottom source contact (M-TLPM/S) is proposed, fabricated, and characterized. The M-TLPM/S is formed along the sidewalls of the meshed trench. The trench bottom source contact is formed between the drain islands in one direction only (contact area), resulting in increased channel density in reduced cell pitch. The fabricated M-TLPM/S features device pitches in the contact and gate areas of 3.0mum and 1.3mum respectively, and exhibits a specific on-resistance of 8.4mOmega-mm(2) for a breakdown voltage of 31V.
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页码：297 / 300
页数：4
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