Hot carrier relaxation dynamics in In0.53Ca0.47As studied by femtosecond pump-probe spectroscopy

被引：8
作者：
Nishiwaki, D
Hamanaka, Y
Nonogaki, Y
Fujiwara, Y
Takeda, Y
Nakamura, A [1 ]
机构：
[1] Nagoya Univ, Ctr Integrated Res Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF LUMINESCENCE | 1999年 / 83-4卷
关键词：
InGaAs; femtosecond pump-probe spectroscopy; hot electron relaxation;
D O I：
10.1016/S0022-2313(99)00073-3
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have investigated relaxation dynamics of hot carriers and formation dynamics of excitons in an In0.53Ga0.47As thin film at 4.2 and 77 K by means of femtosecond pump and probe spectroscopy. The spectral change of exciton absorption band induced by the pumping pulse is composed of broadening and peak shift. The broadening is attributed to scattering of excitons created around the Gamma point by the probe pulse with free carriers generated by the pumping pulse. The observed blue and red shifts are ascribed to the exciton-exciton exchange interaction and the band-gap renormalization, respectively. The time evolution of the shifts of the order of 30 ps is interpreted in terms of the energy-loss processes of hot carriers with emission of optical phonons. Comparison of the observed decay behaviors with the theoretical calculation, taking into account the Frohlich interaction, indicates a reduction in the carrier cooling rate by a factor of 40 in highly excited In0.53Ga0.47As. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
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页码：49 / 53
页数：5
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