Enhancement of performance of P3HT: PCBM based polymer solar cell by Ag2O/PEDOT : PSS composite buffer layer

Ag2O/PEDOT : PSS used as the anode buffer layer is introduced into the P3HT : PCBM based polymer solar cell (PSC). Effect of the Ag2O/PEDOT : PSS composite anode buffer layer on the device performance is investigated. According to the results, we can find that the post-thermal annealing can improve the performance of the PSC with Ag2O/PEDOT : PSS anode buffer layer compare with that without buffer layer. In addition, compared with the devices without such a buffer layer or with only PEDOT : PSS buffer layer, the device with the composite buffer layer can achieve higher J(sc), external quantum efficiency as well as power conversion efficiency. We conclude that the post-thermal annealing can significantly improve the surface morphology which increases the light absorption and the exciton dissociation. The inserted Ag2O together with PEDOT : PSS as the composite buffer layer not only efficiently lowers the hole extraction barrier and improves the hole collection efficiency but also exhibits excellent stability.