Modulating the rate of charge transport in a metal-organic framework thin film using host: guest chemistry
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作者:
Hod, Idan
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Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USANorthwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
Hod, Idan
[1
]
Farha, Omar K.
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Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
King Abdulaziz Univ, Fac Sci, Dept Chem, Jeddah, Saudi ArabiaNorthwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
Farha, Omar K.
[1
,2
]
Hupp, Joseph T.
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Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USANorthwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
Hupp, Joseph T.
[1
]
机构:
[1] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
[2] King Abdulaziz Univ, Fac Sci, Dept Chem, Jeddah, Saudi Arabia
Herein we demonstrate the use of host-guest chemistry to modulate rates of charge transport inmetal-organic framework (MOF) films. The kinetics of site-to-site of charge hopping and, in turn, the overall redox conductivity, of a ferrocene-modified MOF can be altered by up to 30-fold by coupling electron exchange to the oxidation-state-dependent formation of inclusion complexes between cyclodextrin and channel-tethered metallocenes.