Influence of the emitter coverage on interdigitated back contact (IBC) silicon heterojunction (SHJ) solar cells

被引：0
作者：
Desrues, Thibaut [1 ]
de Vecchi, Sylvain [1 ]
d'Alonzo, Guillaume [1 ]
Munoz, Delfina [1 ]
Ribeyron, Pierre-Jean [1 ]
机构：
[1] CEA INES, F-73310 Le Bourget Du Lac, France
来源：
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年
关键词：
photovoltaic cells; silicon; heterojunction; back contacts;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Modelling and experimental results on IBC SHJ solar cells are presented in this paper. Different rear emitter designs are studied by 2D simulation and tested on experimental devices. IBC SHJ cells are fabricated with the SLASH process based on laser patterning steps, and the performance of such devices is shown to be limited by the rear emitter geometry (contacting scheme and total emitter fraction). On one hand IBC SHJ cells have to be carefully designed concerning the contacting scheme due to distributed series resistance effects. On the other hand SHJ technology allows a very high surface passivation level, and this reduces the influence of the emitter fraction on the cells performances.
引用
收藏
页码：857 / 861
页数：5
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