Defects Generation under Constant Voltage Stress in La2O3/HfO2 Gate Stacks Grown on Ge Substrates

被引：3

作者：

Evangelou, E. K. ^{[1
]}

Rahman, M. S. ^{[1
]}

Dimoulas, A. ^{[2
]}

Galata, S. ^{[2
]}

机构：

[1] Univ Ioannina, Dept Phys, POB 1186, GR-45110 Ioannina, Greece

[2] NCSR, Inst Sci Mat, Athens 15310, Greece

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期

关键词：

INDUCED LEAKAGE CURRENT; BORDER TRAPS; TIME-DECAY; DIELECTRICS; SILC;

D O I：

10.1149/1.3206611

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the defect generation under constant voltage stress in La2O3/HfO2 gate stacks grown on Germanium (001) substrates by molecular beam deposition utilizing a stress and sense technique. A voltage range from 0.5V up to 2.4V was used for the measurements. At low applied gate voltages, the stress induced current decrease could be explained by a field lowering model due to charge trapping, while at higher voltages the generation of shallow traps in the Lanthanum oxide layer becomes more important.

引用

页码：105 / 111

页数：7

共 50 条

[21] Advantage of La2O3 Gate Dielectric over HfO2 for Direct Contact and Mobility Improvment
Kakushima, K.
Tachi, K.
Adachi, M.
Okamoto, K.
Sato, S.
Song, J.
Kawanago, T.
Ahmet, P.
Tsutsui, K.
Sugii, N.
Hattori, T.
Iwai, H.
ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 126 - +
[22] Characterization of HfO2/Al2O3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on InAlAs Substrates
Wu, Li-Fan
Zhang, Yu-Ming
Lu, Hong-Liang
Zhang, Yi-Men
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 978 - 980
[23] Electrical characteristics of HfO2/La2O3/HfO2 films deposited by ECR-ALD
Kim, Woong-Sun
Kang, Byung-Woo
Park, Jong-Wan
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2010, 11 (05): : 598 - 601
[24] Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
Triyoso, DH
Hegde, RI
Grant, J
Fejes, P
Liu, R
Roan, D
Ramon, M
Werho, D
Rai, R
La, LB
Baker, J
Garza, C
Guenther, T
White, BE
Tobin, PJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 2121 - 2127
[25] Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide
Maeng, W. J.
Kim, Woo-Hee
Kim, Hyungjun
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[26] Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge substrates
Li, Xue-Fei
Liu, Xiao-Jie
Fu, Ying-Ying
Li, Ai-Dong
Zhang, Wen-Qi
Li, Hui
Wu, Di
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (01):
[27] Impact of Si impurities in HfO2:: Threshold voltage problems in poly-Si/HfO2 gate stacks
Kim, Dae Yeon
Kang, Joongoo
Chang, K. J.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 (06) : 1628 - 1632
[28] PHASE FORMATION IN SYSTEM ZRO2(HFO2)-LA2O3
ZOZ, EI
GAVRISH, AM
GULKO, NV
INORGANIC MATERIALS, 1978, 14 (01) : 84 - 86
[29] Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks
Min, BG
Devireddy, SP
Çelik-Butler, Z
Wang, F
Zlotnicka, A
Tseng, HH
Tobin, PJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (08) : 1315 - 1322
[30] Effects of Dit-induced degradation on InGaAs/InAlAs Nanowire Superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks
Maiorano, P.
Gnani, E.
Gnudi, A.
Reggiani, S.
Baccarani, G.
2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2015, : 57 - 60

← 1 2 3 4 5 →