Defects Generation under Constant Voltage Stress in La2O3/HfO2 Gate Stacks Grown on Ge Substrates

被引：3

作者：

Evangelou, E. K. ^{[1
]}

Rahman, M. S. ^{[1
]}

Dimoulas, A. ^{[2
]}

Galata, S. ^{[2
]}

机构：

[1] Univ Ioannina, Dept Phys, POB 1186, GR-45110 Ioannina, Greece

[2] NCSR, Inst Sci Mat, Athens 15310, Greece

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | 2009年 / 25卷 / 06期

关键词：

INDUCED LEAKAGE CURRENT; BORDER TRAPS; TIME-DECAY; DIELECTRICS; SILC;

D O I：

10.1149/1.3206611

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the defect generation under constant voltage stress in La2O3/HfO2 gate stacks grown on Germanium (001) substrates by molecular beam deposition utilizing a stress and sense technique. A voltage range from 0.5V up to 2.4V was used for the measurements. At low applied gate voltages, the stress induced current decrease could be explained by a field lowering model due to charge trapping, while at higher voltages the generation of shallow traps in the Lanthanum oxide layer becomes more important.

引用

页码：105 / 111

页数：7

共 50 条

[11] Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates
Seo, H.
Bellenger, F.
Chung, K. B.
Houssa, M.
Meuris, M.
Heyns, M.
Lucovsky, G.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
[12] Effective control of flat-band voltage in HfO2 gate dielectric with La2O3 incorporation
Okamoto, K.
Adachi, M.
Kakushima, K.
Ahmeta, P.
Sugii, N.
Tsutsui, K.
Hattori, T.
Iwai, H.
ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, : 199 - +
[13] NBTI behavior of Ge/HfO2/Al gate stacks
Rahim, N.
Misra, D.
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 653 - 654
[14] Dipole formation to modulate flatband voltage using ALD Al2O3 and La2O3 at the interface between HfO2 and Si or Ge substrates
Zhang, Yuanju
Choi, Moonsuk
Wang, Zeli
Choi, Changhwan
APPLIED SURFACE SCIENCE, 2023, 609
[15] HfO2/Pr2O3 gate dielectric stacks
Sidorov, F.
Molchanova, A.
Rogozhin, A.
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
[16] Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study
Shubhakar, Kalya
Pey, Kin Leong
Bosman, Michel
Kushvaha, Sunil Singh
O'Shea, Sean Joseph
Kouda, Miyuki
Kakushima, Kuniyuki
Iwai, Hiroshi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (03):
[17] Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Mavrou, G.
Galata, S.
Tsipas, P.
Sotiropoulos, A.
Panayiotatos, Y.
Dirnoulas, A.
Evangelou, E. K.
Seo, J. W.
Dieker, Ch.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (01)
[18] Degradation and breakdown of 0.9 nm EOT SiO2/ALD HfO2/metal gate stacks under positive constant voltage stress
Degraeve, R
Kauerauf, T
Cho, M
Zahid, M
Ragnarsson, LÅ
Brunco, DP
Kaczer, B
Roussel, P
De Gendt, S
Groeseneken, G
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 419 - 422
[19] Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
Houssa, M
De Jaeger, B
Delabie, A
Van Elshocht, S
Afanas'ev, VV
Autran, JL
Stesmans, A
Meuris, M
Heyns, MM
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (21-23) : 1902 - 1905
[20] Total dose response of ge MOS capacitors with HfO2/Dy2O3 gate stacks
Chen, D. K.
Schrimpf, R. D.
Fleetwood, D. M.
Galloway, K. F.
Pantelides, S. T.
Dimoulas, A.
Mavrou, G.
Sotiropoulos, A.
Panayiotatos, Y.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (04) : 971 - 974

← 1 2 3 4 5 →