Fabrication of high quality PZT thick film using lift-off technique

被引：0

作者：

Zhao, HJ ^{[1
]}

Ren, TL ^{[1
]}

Liu, JS ^{[1
]}

Liu, LT ^{[1
]}

Li, ZJ ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

NANOTECH 2003, VOL 1 | 2003年

关键词：

PZT; thick film; lift-off; SU-8; piezoelectric;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

The present paper proposes a simple fabrication technique of the high quality lead-zirconate-titanate (PZT) thick films with a single coating and using a thick photoresist SU-8, which call for lift-off technique. The PZT films with the thickness of 100mum or higher were crack-free and had good morphology. The PZT films with perfect perovskite structure had excellent piezoelectric property and the d(33) was about 170pC/N. Ferroelectric hysteresis loop was measured, and the remnant polarization (P-r) of the PZT film was about 25muC/cm(2) and the coercive field (E-C) was about 27kV/cm. In the radio-frequency (RF) region, the dielectric constant was about 350 and the dielectric loss was less than 0.01.

引用

页码：502 / 505

页数：4