Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

被引：4

作者：

Tarala, V. A. ^{[1
]}

Altakhov, A. S. ^{[1
]}

Ambartsumov, M. G. ^{[1
]}

Martens, V. Ya. ^{[1
]}

机构：

[1] North Caucasus Fed Univ, Stavropol 355009, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2017年 / 43卷 / 01期

关键词：

THIN-FILMS; ALUMINUM NITRIDE; EPITAXY; GROWTH;

D O I：

10.1134/S1063785017010138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of growing oriented AlN films on Al2O3 substrates at temperatures below 300A degrees C by plasma-enhanced atomic layer deposition was examined. The samples were subjected to X-ray phase analysis and ellipsometry. It was demonstrated that the refraction index of films deposited with plasma exposures longer than 20 s was 2.03 +/- 0.03. The (0002) and (0004) reflections at 2Iy angles of 35.7A degrees and 75.9A degrees were present in the X-ray diffraction patterns of these samples. These reflections are typical of the hexagonal AlN polytype. The full width at half maximum of the rocking curve of reflection (0002) in the best sample was 162 +/- 11 arcsec.

引用

页码：74 / 77

页数：4

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