Influence of asymmetric nonlinear gain on the transient intensities of longitudinal modes in long wavelength Fabry-Perot laser diodes

被引：22

作者：

Ogita, S ^{[1
]}

Lowery, AJ ^{[1
]}

Tucker, RS ^{[1
]}

机构：

[1] UNIV MELBOURNE,DEPT ELECT & ELECT ENGN,PHOTON RES LAB,AUSTRALIAN PHOTON COOPERAT RES CTR,PARKVILLE,VIC 3052,AUSTRALIA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 02期

关键词：

nonlinear optics; optical communication; optical modulation/demodulation; semiconductor lasers; simulation; time-domain analysis;

D O I：

10.1109/3.552260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The intensity transients of the longitudinal modes in a modulated 1.3-mu m Fabry-Perot laser diode are analyzed theoretically and experimentally. A simulation of the transient spectra, based on a 21-mode rate-equation model, shows that nonlinear gain strongly affects the intensities of longitudinal modes during transients. The simulation results are confirmed by time-resolved spectrum measurements, From a comparison of measurements and the simulations, the self- and cross-saturation coefficients are estimated, Our simulations also show that the transient spectrum strongly depends on the bit interval during digital modulation.

引用

页码：198 / 210

页数：13

共 38 条

[1] LONGITUDINAL MODE COMPETITION IN SEMICONDUCTOR-LASERS - RATE-EQUATIONS REVISITED [J].

ADAMS, MJ ;

OSINSKI, M .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06) :271-274

[2] MODE-PARTITION NOISE AND INTENSITY CORRELATION IN A 2-MODE SEMICONDUCTOR-LASER [J].

AGRAWAL, GP .

PHYSICAL REVIEW A, 1988, 37 (07) :2488-2494

[3] GAIN NONLINEARITIES IN SEMICONDUCTOR-LASERS - THEORY AND APPLICATION TO DISTRIBUTED FEEDBACK LASERS [J].

AGRAWAL, GP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :860-868

[4]

AGRAWAL GP, 1986, ELECTRON LETT, V22, P696, DOI 10.1049/el:19860476

[5]

AGRAWAL GP, 1993, SEMICONDUCTOR LASERS, P238

[6] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :434-442

[7] ANOMALOUS INTERACTION OF SPECTRAL MODES IN A SEMICONDUCTOR LASER [J].

BOGATOV, AP ;

ELISEEV, PG ;

SVERDLOV, BN .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :510-515

[8] HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].

BOWERS, JE ;

HEMENWAY, BR ;

GNAUCK, AH ;

WILT, DP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844

[9] CARRIER DIFFUSION AND HIGHER-ORDER TRANSVERSAL MODES IN SPECTRAL DYNAMICS OF SEMICONDUCTOR-LASER [J].

BUUS, J ;

DANIELSEN, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :669-674

[10] EFFECT OF GAIN SATURATION ON INJECTION-LASER SWITCHING [J].

CHANNIN, DJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :3858-3860

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