A light-modified ferroelectric resistive switching behavior in Ag/BaMoO4/FTO device at ambient temperature

被引：8
|
作者：
Zhao, W. X. [1 ,2 ]
Sun, B. [1 ,2 ]
Liu, Y. H. [1 ]
Wei, L. J. [1 ]
Li, H. W. [1 ]
Chen, P. [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
[2] Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing 400715, Peoples R China
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2014年 / 220卷
基金：
美国国家科学基金会;
关键词：
Ag/BaMoO4/FTO device; Resistive switching; Light-modified; Polarization reversed; FABRICATION;
D O I：
10.1016/j.jssc.2014.08.010
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
BaMoO4 powder was prepared by a facile hydrothermal synthesis. And the BaMoO4/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO4 layer is about 20 mu m. The bipolar resistive switching effect has been observed in Ag/BaMoO4/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. (C) 2014 Elsevier Inc. All rights reserved.
引用
收藏
页码：32 / 36
页数：5
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