Free-carrier absorption and active layer heating in large optical cavity high-power diode lasers

被引：13
作者：
Ryvkin, B. S.
Avrutin, E. A.
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
[3] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 02期
关键词：
D O I：
10.1063/1.2212147
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An analytical theory is developed for the thermal properties of a large optical cavity semiconductor laser high above threshold. The performance of symmetric and asymmetric waveguide structures is analyzed and compared. Narrow asymmetric waveguides are predicted to be advantageous from the thermal point of view. (c) 2006 American Institute of Physics.
引用
收藏
页数：8
相关论文
共 28 条
[1]  
Adachi S., 1992, PHYS PROPERTIES 3 V
[2]   High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers [J].
Al-Muhanna, A ;
Mawst, LJ ;
Botez, D ;
Garbuzov, DZ ;
Martinelli, RU ;
Connolly, JC .
APPLIED PHYSICS LETTERS, 1998, 73 (09) :1182-1184
[3]   THERMAL-RESISTANCE OF RIDGE-WAVE-GUIDE LASERS MOUNTED UPSIDE DOWN [J].
AMANN, MC .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :4-6
[4]  
Avrutin E A, 2005, P 5 IEEE INT C NUM S, P81
[5]   Design and analysis of double-fused 1.55-mu m vertical-cavity lasers [J].
Babic, DI ;
Piprek, J ;
Streubel, K ;
Mirin, RP ;
Margalit, NM ;
Mars, DE ;
Bowers, JE ;
Hu, EL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (08) :1369-1383
[6]   Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers [J].
Belenky, GL ;
Reynolds, CL ;
Kazarinov, RF ;
Swaminathan, V ;
Luryi, SL ;
Lopata, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (08) :1450-1455
[7]   Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers [J].
Botez, D .
APPLIED PHYSICS LETTERS, 1999, 74 (21) :3102-3104
[8]  
CODLREN LA, 1995, DIODE LASERS PHOTONI
[9]  
COKHALE MR, 1997, IEEE J QUANTUM ELECT, V33, P2266
[10]  
DIEHL R, 2000, TOPICS APPL PHYS, V78
123