Ni precursor for chemical vapor deposition of NiSi

Nickel thin film is an attractive material for use as electrodes or contacts of metal oxide semiconductor field effect transistors (MOSFETs), and numerous studies have focused on Ni monosilicide (NiSi). Bis-methylcyclopentadienyl-nickel [(MeCP)(2)Ni] is a dark green solid at room temperature, which becomes liquid at 36degreesC. Thermogravimetric differential thermal analysis (TGDTA) measurements revealed that most of the (MeCP)(2)Ni is vaporized without thermal decomposition and it decomposes from 200degreesC to 250degreesC. (MeCP)(2)Ni has a low viscosity and a high vapor pressure (1 Torr at 73degreesC), and its transportability is sufficiently good for it to be used as a chemical vapor deposition (CVD) precursor. Ni was deposited at 300degreesC by CVD using a (MeCP)(2)Ni/H-2 gas system. Ni reacted with the Si substrate, and X-ray diffraction (XRD) analysis showed that a part of the silicides had formed on the Si substrate. Si3H8 injection prevents the Si substrate from being consumed by the silicide reaction. and a conformal NiSi film with a flat interface on the Si substrate was obtained.