Automating the sizing of transistors in CMOS gates for low-power and high-noise margin operation

被引:6
作者
Beg, Azam [1 ]
机构
[1] UAE Univ, Coll Informat Technol, Abu Dhabi, U Arab Emirates
关键词
CMOS; logic gates; transistor sizing; static noise margin; power dissipation; energy consumption; PID feedback control; LOGIC; DESIGN; SIMULATION; CIRCUITS;
D O I
10.1002/cta.2031
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an automatic method for sizing the transistors in CMOS gates. The method utilizes a feedback control system to efficiently optimize the transistor sizes in small and large fan-in gates, with the primary goal of enhancing noise robustness (as characterized by the static noise margin). The gates retain their robustness under threshold-voltage variations over a range of supply voltages. The optimized gates not only expend reduced power and energy, but also take up less area than the conventional ones. These multi-faceted gains, however, do incur some performance loss. Copyright (c) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码:1637 / 1654
页数:18
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