Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO2) x (SiO2)1-x

被引：1

作者：

Lue ShiCheng ^{[1
,2
]}

Yin Jiang ^{[1
,2
]}

Xia YiDong ^{[2
,3
]}

Gao LiGang ^{[2
,3
]}

Liu ZhiGuo ^{[2
,3
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

来源：

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2009年 / 52卷 / 08期

关键词：

high-k dielectric; film; pulsed laser deposition; pseudo ternary alloy; GATE DIELECTRICS; SILICON; FILMS;

D O I：

10.1007/s11431-009-0226-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(ZrO2) (x) (SiO2)(1-x) (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800A degrees C with RTA process in N-2 for 60 s. The XPS spectra indicated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800A degrees C, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x > 0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2)(0.7)(SiO2)(0.3)/(ZrO2)(0.5)(SiO2)(0.5)/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.

引用

页码：2222 / 2226

页数：5

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