Layer number controllability of transition-metal dichalcogenides and the establishment of hetero-structures by using sulfurization of thin transition metal films

被引：17

作者：

Chen, Kuan-Chao ^{[1
,2
]}

Chu, Tung-Wei ^{[2
,3
]}

Wu, Chong-Rong ^{[1
,2
]}

Lee, Si-Chen ^{[1
]}

Lin, Shih-Yen ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 06期

关键词：

2D crystals; hetero-structure; transistors; MOS2; MONOLAYER; GRAPHENE; GROWTH;

D O I：

10.1088/1361-6463/aa52b6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area and uniform MoS2 films are fabricated by using sulfurization of pre-deposited molybdenum (Mo) films. One-and three-layer MoS2 films are obtained by sulfurizing 0.5 and 1.0 nm Mo films, respectively. The results have demonstrated the good layer number controllability of this growth technique down to single-layer MoS2. By sequential sulfurization of 0.5 nm W, 0.5 nm Mo and 0.5 nm W under the same condition, three layers of the WS2/MoS2/WS2 hetero-structure are established, which has demonstrated the potential of this growth technique for the establishment of 2D crystal hetero-structures.

引用

页数：6

共 21 条

[1] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[2] Enhancement of field-effect mobility in molybdenum-disulfide transistor through the treatment of low-power oxygen plasma [J].

Chen, Kuan-Chao ;

Wu, Chong-Rong ;

Chang, Xiang-Rui ;

Chang, Shu-Wei ;

Lee, Si-Chen ;

Lin, Shih-Yen .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (09)

[3] Determination of band alignment in the single-layer MoS2/WSe2 heterojunction [J].

Chiu, Ming-Hui ;

Zhang, Chendong ;

Shiu, Hung-Wei ;

Chuu, Chih-Piao ;

Chen, Chang-Hsiao ;

Chang, Chih-Yuan S. ;

Chen, Chia-Hao ;

Chou, Mei-Yin ;

Shih, Chih-Kang ;

Li, Lain-Jong .

NATURE COMMUNICATIONS, 2015, 6

[4] Chemical Sensing of 2D Graphene/MoS2 Heterostructure device [J].

Cho, Byungjin ;

Yoon, Jongwon ;

Lim, Sung Kwan ;

Kim, Ah Ra ;

Kim, Dong-Ho ;

Park, Sung-Gyu ;

Kwon, Jung-Dae ;

Lee, Young-Joo ;

Lee, Kyu-Hwan ;

Lee, Byoung Hun ;

Ko, Heung Cho ;

Hahm, Myung Gwan .

ACS APPLIED MATERIALS & INTERFACES, 2015, 7 (30) :16775-16780

[5] Synthesis of Graphene and Its Applications: A Review [J].

Choi, Wonbong ;

Lahiri, Indranil ;

Seelaboyina, Raghunandan ;

Kang, Yong Soo .

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2010, 35 (01) :52-71

[6] Van der Waals heterostructures [J].

Geim, A. K. ;

Grigorieva, I. V. .

NATURE, 2013, 499 (7459) :419-425

[7]

Gong YJ, 2014, NAT MATER, V13, P1135, DOI [10.1038/NMAT4091, 10.1038/nmat4091]

[8] Large area single crystal (0001) oriented MoS2 [J].

Laskar, Masihhur R. ;

Ma, Lu ;

Kannappan, Santhakumar ;

Park, Pil Sung ;

Krishnamoorthy, Sriram ;

Nath, Digbijoy N. ;

Lu, Wu ;

Wu, Yiying ;

Rajan, Siddharth .

APPLIED PHYSICS LETTERS, 2013, 102 (25)

[9] Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions [J].

Lin, Meng-Yu ;

Chang, Chung-En ;

Wang, Cheng-Hung ;

Su, Chen-Fung ;

Chen, Chi ;

Lee, Si-Chen ;

Lin, Shih-Yen .

APPLIED PHYSICS LETTERS, 2014, 105 (07)

[10] High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Mono layer MoS2 Transistors [J].

Liu, Bilu ;

Chen, Liang ;

Liu, Gang ;

Abbas, Ahmad N. ;

Fathi, Mohammad ;

Zhou, Chongwu .

ACS NANO, 2014, 8 (05) :5304-5314

← 1 2 3 →