Electro-physical characteristics of MIS structures with HgTe-based single quantum wells

被引：0
作者：
Dzyadukh, S. [1 ]
Nesmelov, S. [1 ]
Voitsekhovskii, A. [1 ]
Gorn, D. [1 ]
机构：
[1] Tomsk State Univ, Siberian Phys Tech Inst, Nanoelect & Nanophoton Lab, Radiophys Fac, Tomsk 634021, Russia
来源：
17TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB/2014) | 2015年 / 661卷
关键词：
GRADED-GAP HGCDTE; ELECTRICAL CHARACTERISTICS; INFRARED DETECTORS; SEMICONDUCTOR; SUPERLATTICES; EPITAXY;
D O I：
10.1088/1742-6596/661/1/012032
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The paper presents brief research results of the admittance of metal-insulator-semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 to 200 K. It is shown that for structure with quantum well based on HgTe capacitance and conductance oscillations in the strong inversion are observed. Also it is assumed these oscillations are related with the recharging of quantum levels in HgTe.
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页数：6
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