The location and effects of Si in (Ti1-xSix)Ny thin films

被引：54

作者：

Flink, Axel ^{[1
]}

Beckers, Manfred ^{[1
]}

Sjolen, Jacob ^{[2
]}

Larsson, Tommy ^{[2
]}

Braun, Slawomir ^{[3
]}

Karlsson, Lennart ^{[2
]}

Hultman, Lars ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden

[2] Seco Tools AB, SE-73782 Fagersta, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol IFM, Div Surface Phys & Chem, SE-58183 Linkoping, Sweden

来源：

JOURNAL OF MATERIALS RESEARCH | 2009年 / 24卷 / 08期

基金：

瑞典研究理事会;

关键词：

SOLID-SOLUTIONS; MICROSTRUCTURE; GROWTH; MORPHOLOGY; MECHANISM; THICKNESS; HARDNESS; DESIGN; ENERGY; LAYERS;

D O I：

10.1557/JMR.2009.0299

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Ti1-xSix)N-y (0 <= x <= 0.20; 0.99 <= y(x) <= 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x <= 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 haven a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 10(14) cm(-2) is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 degrees C due to segregation of SiN, to the grain boundaries. During annealing at 1100-1200 degrees C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

引用

页码：2483 / 2498

页数：16

共 41 条

[1]

ALLING B, 2008, UNPUB

[2]

Boxman R.L., 1995, Handbook of Vacuum Arc Science, Fundamentals and Applications

[3] ESCA AND SEXAFS INVESTIGATIONS OF INSULATING MATERIALS FOR ULSI MICROELECTRONICS [J].

FINSTER, J ;

KLINKENBERG, ED ;

HEEG, J ;

BRAUN, W .

VACUUM, 1990, 41 (7-9) :1586-1589

[4] SUBSTITUTIONAL SOLUTION HARDENING [J].

FLEISCHER, RL .

ACTA METALLURGICA, 1963, 11 (03) :203-&

[5] Influence of Si on the microstructure of arc evaporated (Ti,Si)N thin films;: evidence for cubic solid solutions and their thermal stability [J].

Flink, A ;

Larsson, T ;

Sjölén, J ;

Karlsson, L ;

Hultman, L .

SURFACE & COATINGS TECHNOLOGY, 2005, 200 (5-6) :1535-1542

[6] Experimental and theoretical study of the electronic properties Of COSi2 and NiSi2 [J].

García-Méndez, M ;

Galvan, DH ;

Posada-Amarillas, A ;

Farías, MH .

APPLIED SURFACE SCIENCE, 2004, 230 (1-4) :386-392

[7] ESCA STUDY OF AMORPHOUS CVD SI3N4-BN COMPOSITES [J].

GOTO, T ;

HIRAI, T .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1988, 7 (05) :548-550

[8] THE DEFORMATION AND AGEING OF MILD STEEL .3. DISCUSSION OF RESULTS [J].

HALL, EO .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1951, 64 (381) :747-753

[9] Microstructure and properties of Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition [J].

He, JL ;

Chen, CK ;

Hon, MH .

MATERIALS CHEMISTRY AND PHYSICS, 1996, 44 (01) :9-16

[10] Study on the superhardness mechanism of Ti-Si-N nandcomposite films:: Influence of the thickness of the Si3N4 interfacial phase [J].

Hu, XP ;

Zhang, HJ ;

Dai, JW ;

Li, GY ;

Gu, MY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (01) :114-117

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