A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

被引：42

作者：

Sung, Woongje ^{[1
,2
]}

Baliga, B. J. ^{[3
]}

机构：

[1] State Univ New York Polytech Inst, Coll Nanoscale Sci, Albany, NY 12203 USA

[2] State Univ New York Polytech Inst, Coll Engn, Albany, NY 12203 USA

[3] North Carolina State Univ, PowerAmer Inst, Raleigh, NC 27695 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 04期

关键词：

4H-Silicon Carbide (4H-SiC); edge termination; floating field ring (FFR); guard ring; JTE; junction termination extension (JTE); silicon carbide; DIODES;

D O I：

10.1109/TED.2017.2664051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper compares five edge termination techniques for SiC high-voltage devices: single zone junction termination extension (JTE), ring assisted-JTE (RA-JTE), multiple floating zone-JTE, hybrid-JTE, and floating field rings. PiN diodes with these edge terminations were fabricated on a 4.5kV-rated 4H-silicon carbide (4H-SiC) epi-layer. It was experimentally demonstrated that the Hybrid-JTE provides a nearly ideal breakdown voltage (99% of the ideal parallel plane breakdown voltage) with a stable avalanche blocking behavior. RA-JTE, with tight control of the JTE implant dose, is demonstrated to be the most area-efficient edge termination structure for SiC power devices.

引用

页码：1647 / 1652

页数：6

共 11 条

[1]

Baliga B.J., 2008, Fundamentals of Power Semiconductor Devices, P91

[2]

Bolotnikov Alexander, 2016, Materials Science Forum, V858, P737, DOI 10.4028/www.scientific.net/MSF.858.737

[3]

Brunt EV, 2014, PROC INT SYMP POWER, P358, DOI 10.1109/ISPSD.2014.6856050

[4] Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC [J].

Feng, Gan ;

Suda, Jun ;

Kimoto, Tsunenobu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (02) :414-418

[5] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes [J].

Hiyoshi, Toru ;

Hori, Tsutomu ;

Suda, Jun ;

Kimoto, Tsunenobu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) :1841-1846

[6]

Kinoshita K, 2002, PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P253

[7] Study of avalanche breakdown and impact ionization in 4H silicon carbide [J].

Konstantinov, AO ;

Wahab, Q ;

Nordell, N ;

Lindefelt, U .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :335-341

[8] A highly effective edge termination design for SiC planar high power devices [J].

Pérez, R ;

Mestres, N ;

Blanque, S ;

Tournier, D ;

Jordà, X ;

Godignon, P ;

Nipoti, R .

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 :1253-1256

[9] A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension [J].

Sung, Woongje ;

Baliga, B. J. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) :1609-1612

[10] A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension [J].

Sung, Woongje ;

Van Brunt, Edward ;

Baliga, B. J. ;

Huang, Alex Q. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) :880-882

← 1 2 →