Hydrogen interaction with dislocations in Si

被引：27

作者：

Ewels, CP ^{[1
]}

Leoni, S

Heggie, MI

Jemmer, P

Hernández, E

Jones, R

Briddon, PR

机构：

[1] Univ Sussex, CPES, Brighton BN1 9QJ, E Sussex, England

[2] Univ Exeter, Sch Phys, Exeter EX4 4PY, Devon, England

[3] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.84.690

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H? With the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.

引用

页码：690 / 693

页数：4

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