Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping

被引：4

作者：

Chyi, JI ^{[1
]}

Chien, YJ ^{[1
]}

Yuang, RH ^{[1
]}

Shieh, JL ^{[1
]}

Pan, JW ^{[1
]}

Chen, JS ^{[1
]}

机构：

[1] NATL SCI COUNCIL,PRECIS INSTRUMENT DEV CTR,HSINCHU 30077,TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 11期

关键词：

D O I：

10.1109/68.541571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temporal responses of the undoped, n-type, and p-type delta-doped GaAs metal-semiconductor-metal photodetectors were systematically studied. The full-width at half-maximum of the temporal response is significantly improved at low bias for the F-doped detectors compared to the conventional undoped one. The p-type delta-doped detector exhibits the smallest fall-time, and hence the highest bandwidth, because the induced electric field in the absorption region facilitates the transport of the photogenerated holes. In addition, the p-type delta-doped detector also gives the highest peak amplitude of the temporal response. Two dimensional simulation on the internal electrical field distribution in the detectors is consistent with the experimental results.

引用

页码：1525 / 1527

页数：3

共 9 条

[1] DOPING-INDUCED BANDWIDTH ENHANCEMENT IN METAL-SEMICONDUCTOR METAL PHOTODETECTORS [J].

BURROUGHES, JH ;

ROGERS, DL ;

ARJAVALINGAM, G ;

PETTIT, GD ;

GOORSKY, MS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (07) :657-659

[2] 375-GHZ-BANDWIDTH PHOTOCONDUCTIVE DETECTOR [J].

CHEN, Y ;

WILLIAMSON, S ;

BROCK, T ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :1984-1986

[3] NANOSCALE TERA-HERTZ METAL-SEMICONDUCTOR-METAL PHOTODETECTORS [J].

CHOU, SY ;

LIU, MY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2358-2368

[4] BANDWIDTH ENHANCED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS BASED ON BACKGATED IP STRUCTURES [J].

GREGER, E ;

REINGRUBER, K ;

RIEL, P ;

DOHLER, GH ;

ROSENZWEIG, J ;

LUDWIG, M .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2223-2225

[5] ULTRAFAST CARRIER DYNAMICS IN III-V-SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW SUBSTRATE TEMPERATURES [J].

GUPTA, S ;

WHITAKER, JF ;

MOUROU, GA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2464-2472

[6] HOLE DOMINATED TRANSPORT IN INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS [J].

HARGIS, M ;

RALPH, SE ;

WOODALL, J ;

MCINTURFF, D .

APPLIED PHYSICS LETTERS, 1995, 67 (03) :413-415

[7] HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH ER-DOPED GAAS [J].

SETHI, S ;

BROCK, T ;

BHATTACHARYA, PK ;

KIM, J ;

WILLIAMSON, S ;

CRAIG, D ;

NEES, J .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (03) :106-108

[8] HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS [J].

YUANG, RH ;

CHYI, JI ;

CHAN, YJ ;

LIN, W ;

TU, YK .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1333-1335

[9] GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PDS) WITH ALGAAS CAP AND BUFFER LAYERS [J].

YUANG, RH ;

SHIEH, JL ;

LIN, RM ;

CHYI, JI .

JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS, 1995, 18 (03) :445-449

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