Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor

被引：336

作者：

Wu, Zhongwei ^{[1
,2
]}

Bai, Sai ^{[3
]}

Xiang, Jian ^{[1
,2
]}

Yuan, Zhongcheng ^{[1
,2
]}

Yang, Yingguo ^{[4
]}

Cui, Wei ^{[1
,2
]}

Gao, Xingyu ^{[4
]}

Liu, Zhuang ^{[1
,2
]}

Jin, Yizheng ^{[3
]}

Sun, Baoquan ^{[1
,2
]}

机构：

[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China

[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China

[3] Zhejiang Univ, Dept Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China

来源：

NANOSCALE | 2014年 / 6卷 / 18期

基金：

中国国家自然科学基金;

关键词：

SOLUTION-PROCESSED PEROVSKITE; ELECTRON EXTRACTION; LOW-COST; PERFORMANCE; LAYER; CRYSTALLIZATION; LENGTHS;

D O I：

10.1039/c4nr03181d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH3NH3PbI3-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.

引用

页码：10505 / 10510

页数：6

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