Efficient planar heterojunction perovskite solar cells employing graphene oxide as hole conductor

被引:336
|
作者
Wu, Zhongwei [1 ,2 ]
Bai, Sai [3 ]
Xiang, Jian [1 ,2 ]
Yuan, Zhongcheng [1 ,2 ]
Yang, Yingguo [4 ]
Cui, Wei [1 ,2 ]
Gao, Xingyu [4 ]
Liu, Zhuang [1 ,2 ]
Jin, Yizheng [3 ]
Sun, Baoquan [1 ,2 ]
机构
[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China
[3] Zhejiang Univ, Dept Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
基金
中国国家自然科学基金;
关键词
SOLUTION-PROCESSED PEROVSKITE; ELECTRON EXTRACTION; LOW-COST; PERFORMANCE; LAYER; CRYSTALLIZATION; LENGTHS;
D O I
10.1039/c4nr03181d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphene oxide (GO) is employed as a hole conductor in inverted planar heterojunction perovskite solar cells, and the devices with CH3NH3PbI3-xClx as absorber achieve an efficiency of over 12%. The perovskite film grown on GO exhibits enhanced crystallization, high surface coverage ratio as well as preferred in-plane orientation of the (110) plane. Efficient hole extraction from the perovskite to GO is demonstrated.
引用
收藏
页码:10505 / 10510
页数:6
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