Advanced passivation techniques for Si solar cells with high-κ dielectric materials

被引：17

作者：

Geng, Huijuan ^{[1
]}

Lin, Tingjui ^{[2
,3
]}

Letha, Ayra Jagadhamma ^{[2
,3
]}

Hwang, Huey-Liang ^{[1
,2
,3
]}

Kyznetsov, Fedor A. ^{[4
]}

Smirnova, Tamara P. ^{[4
]}

Saraev, Andrey A. ^{[5
]}

Kaichev, Vasily V. ^{[5
,6
]}

机构：

[1] Shanghai Jiao Tong Univ, Minist Educ, Key Lab Thin Film & Microfabricat, Dept Micro Nano Elect, Shanghai 200240, Peoples R China

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[4] Nikolaev Inst Inorgan Chem, Novosibirsk 630090, Russia

[5] Boreskov Inst Catalysis, Novosibirsk 630090, Russia

[6] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 12期

基金：

中国国家自然科学基金;

关键词：

SURFACE RECOMBINATION; SILICON; CHEMISTRY; FILMS;

D O I：

10.1063/1.4896619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al2O3, HfO2) and their compounds H((Hf))A((Al))O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al2O3 film has been found to provide negative fixed charge (-6.4 X 10(11) cm(-2)), whereas HfO2 film provides positive fixed charge (3.2 X 10(12) cm(-2)). The effective lifetimes can be improved after oxygen gas annealing for 1min. I-V characteristics of Si solar cells with high-kappa dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO2 film would provide better passivation properties than that of the ALD-Al2O3 film in this research work. (C) 2014 AIP Publishing LLC.

引用

页数：5

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