Analysis of the band alignment of highly strained indium-rich GaInNAs QWs on InP substrates

被引：10
作者：
Gonul, B. [1 ]
Bakir, E. [1 ]
Koksal, K. [1 ]
机构：
[1] Gaziantep Univ, Dept Engn Phys, TR-27310 Gaziantep, Turkey
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 07期
关键词：
D O I：
10.1088/0268-1242/21/7/009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The focus of this paper is to present the calculations of the band alignment of indium-rich (> 53%) highly strained Ga1-xInxNyAs1-y quantum wells on InP substrates which allows an emission wavelength of the order of 2.3 mu m. We concentrate on the band alignment of Ga0.22In0.78N0.01As0.99 wells lattice matched to In0.52Al0.48As barriers. Our calculations show that the incorporation of nitrogen into Ga1-xInxAs improves the band alignment significantly allowing Ga0.22In0.78N0.01As0.99/In0.52Al0.48As quantum wells on InP substrates to compete with the unique band alignment of GaInNAs/GaAs quantum wells on GaAs substrates.
引用
收藏
页码：876 / 880
页数：5
相关论文
共 19 条
[1]   Band gaps of lattice-matched (Ga,In)(As,N) alloys [J].
Bellaiche, L .
APPLIED PHYSICS LETTERS, 1999, 75 (17) :2578-2580
[2]  
Buyanova IA, 2001, MRS INTERNET J N S R, V6
[3]  
CHUANG SL, 1995, PHYS OPTOELECTRONIC, P711
[4]   Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime [J].
Ellmers, C ;
Höhnsdorf, F ;
Koch, J ;
Agert, C ;
Leu, S ;
Karaiskaj, D ;
Hofmann, M ;
Stolz, W ;
Rühle, WW .
APPLIED PHYSICS LETTERS, 1999, 74 (16) :2271-2273
[5]   Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP [J].
Gokhale, MR ;
Wei, J ;
Wang, HS ;
Forrest, SR .
APPLIED PHYSICS LETTERS, 1999, 74 (09) :1287-1289
[6]   Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates [J].
Gönül, B ;
Köksal, K ;
Bakir, E .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 31 (02) :148-154
[7]  
Gönül B, 2004, CHINESE J PHYS, V42, P764
[8]   Gain in 1.3 μm materials:: InGaNAs and InGaPAs semiconductor quantum-well lasers [J].
Hader, J ;
Koch, SW ;
Moloney, JV ;
O'Reilly, EP .
APPLIED PHYSICS LETTERS, 2000, 77 (05) :630-632
[9]   The realization of long-wavelength (λ≤ 2.3 μm) Ga1-xInxAs1-xNy quantum wells on InP by molecular-beam epitaxy [J].
Köhler, K ;
Wagner, J ;
Ganser, P ;
Serries, D ;
Geppert, T ;
Maier, M ;
Kirste, L .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (31) :S2995-S3008
[10]   GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].
Kondow, M ;
Uomi, K ;
Niwa, A ;
Kitatani, T ;
Watahiki, S ;
Yazawa, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275
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