A 19.4 nJ/decision 364K decisions/s In-memory Random Forest Classifier in 6T SRAM Array

被引:0
作者
Kang, Mingu [1 ]
Gonugondla, Sujan K. [1 ]
Shanbhag, Naresh R. [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Champaign, IL 61820 USA
来源
ESSCIRC 2017 - 43RD IEEE EUROPEAN SOLID STATE CIRCUITS CONFERENCE | 2017年
关键词
machine learning; random forest; in-memory computing; pattern recognition; traffic sign recognition;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents IC realization of a random forest (RF) machine learning classifier. Algorithm-architecture-circuit is co-optimized to minimize the energy-delay product (EDP). Deterministic subsampling (DSS) and balanced decision trees result in reduced interconnect complexity and avoid irregular memory accesses. Low-swing analog in-memory computations embedded in a standard 6T SRAM enable massively parallel processing thereby minimizing the memory fetches and reducing the EDP further. The 65nm CMOS prototype achieves a 6.8x lower EDP compared to a conventional design at the same accuracy (94%) for an 8-class traffic sign recognition problem.
引用
收藏
页码:263 / 266
页数:4
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