Dipole formation at metal/PTCDA interfaces:: role of the charge neutrality level

被引：209

作者：

Vázquez, H

Oszwaldowski, R

Pou, P

Ortega, J

Pérez, R

Flores, F

Kahn, A

机构：

[1] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

EUROPHYSICS LETTERS | 2004年 / 65卷 / 06期

关键词：

D O I：

10.1209/epl/i2003-10131-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak- chemisorption theory. The electronic structure of the uncoupled PTCDA molecule and of the metal surface is calculated. Then, the induced density of interface states is obtained as a function of these two electronic structures and the interaction between both systems. This induced density of states is found to be large enough (even if the metal/PTCDA interaction is weak) for the definition of a Charge Neutrality Level for PTCDA, located 2.45 eV above the highest occupied molecular orbital. We conclude that the metal/PTCDA interface molecular level alignment is due to the electrostatic dipole created by the charge transfer between the two solids.

引用

收藏

页码：802 / 808

页数：7

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